Structural and Electronic Properties of Nitrogen-Doped Graphene
نویسندگان
چکیده
منابع مشابه
Synthesis and structural properties of Mn-doped ZnO/Graphene nanocomposite
Zinc oxide (ZnO) is a promising metal oxide semiconductor with various applications, especially in the photocatalytic destruction of environmental pollutants. However, this nanoparticle has some limitations, such as poor dispersion, aggregation, and a wide energy gap. As such, the doping of metal oxide semiconductor has been strongly recommended. Addition of manganese (Mn) has proven effective ...
متن کاملStructural and Electronic Properties of Functionalized Graphene
In the present paper, we study the effects of functionalization of graphene with simple organic molecules OH, and NH2, focusing on the stability and band gaps of the structures. We have performed DFT calculations for graphene supercells with various numbers of the attached molecules. We have determined adsorption energies of the functionalized graphene monoand bilayers, the changes in the geome...
متن کاملCharge transfer and electronic doping in nitrogen-doped graphene
Understanding the modification of the graphene's electronic structure upon doping is crucial for enlarging its potential applications. We present a study of nitrogen-doped graphene samples on SiC(000) combining angle-resolved photoelectron spectroscopy, scanning tunneling microscopy and spectroscopy and X-ray photoelectron spectroscopy (XPS). The comparison between tunneling and angle-resolved ...
متن کاملTunable electronic properties of graphene through controlling bonding configurations of doped nitrogen atoms
Single-layer and mono-component doped graphene is a crucial platform for a better understanding of the relationship between its intrinsic electronic properties and atomic bonding configurations. Large-scale doped graphene films dominated with graphitic nitrogen (GG) or pyrrolic nitrogen (PG) were synthesized on Cu foils via a free radical reaction at growth temperatures of 230-300 °C and 400-60...
متن کاملinvestigation of the electronic properties of carbon and iii-v nanotubes
boron nitride semiconducting zigzag swcnt, $b_{cb}$$n_{cn}$$c_{1-cb-cn}$, as a potential candidate for making nanoelectronic devices was examined. in contrast to the previous dft calculations, wherein just one boron and nitrogen doping configuration have been considered, here for the average over all possible configurations, density of states (dos) was calculated in terms of boron and nitrogen ...
15 صفحه اولذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review Letters
سال: 2016
ISSN: 0031-9007,1079-7114
DOI: 10.1103/physrevlett.116.126805